BUT56A npn epitaxial silicon transistor high voltage switching use in horizontal deflection output stage sc-65 absolute maximum ratings (t a =25 c cc c ) characteristic symbol rating unit collector-base voltage collector-emittervoltage emitter-base voltage collector current (dc) collector peck current base current (dc) collector dissipation (tc=25 c) junction temperature storage temperature vcbo vceo vebo ic icm ib pc tj tstg 1000 450 6 8 10 4 100 150 -65~150 v v v a a a w c c electrical characteristics (ta=25 c cc c ) characterristic symbol test condition min typ max unit collector cutoff current (vbe=0) emitter cutoff current(ic=0) collector emitter saturation voltage base- emitter saturation voltage current gain bandwith product turn-off time ices iebo vce(sat) vbe(sat) ft toff vce= 800v , veb= 0 veb= 6v , ic=0 ic=5a, ib=0.5a ic=5a, ib=1.2a vce= 10v , ic=500ma ic=4a, ib=0.4a ic=4a, ib=0.6a ic=5a, ib=1.0a 10 5 1 2.5 2.5 0.75 0.5 0.5 ma ma v v mhz s s s wing shing computer components co., (h.k.)ltd. tel:(852)2341 9276 fax:(852)2797 8153 homepage: http://www.wingshing.com e-mail: wsccltd@hkstar.com
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